ZXMN6A08G PDF and Equivalents Search

ZXMN6A08G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.080 @ VGS = 10V 5.3 60 0.150 @ VGS = 4.5V 2.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resi... See More ⇒

ZXMN6A08G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.080 @ VGS = 10V 5.3 60 0.150 @ VGS = 4.5V 2.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resi... See More ⇒

A Product Line of Diodes Incorporated ZXMN6A08K 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech... See More ⇒

A Product Line of Diodes Incorporated ZXMN6A08K 60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech... See More ⇒

A Product Line of Diodes Incorporated ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Low gate drive 80m @ VGS=10V 3.5A Low threshold 100V Green component and RoHS compliant (Note 1) 150m @ VGS=4.5V 2.5A Qualified to AEC-Q101 S... See More ⇒

ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25 C Low Gate Drive 80m @ VGS=10V 3.5A 60V Low Threshold 150m @ VGS=4.5V 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3... See More ⇒

ZXMN6A08E6Q 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25 C Low Gate Drive 80m @ VGS=10V 3.5A 60V Low Threshold 150m @ VGS=4.5V 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note ... See More ⇒