AP20N06T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP20N06T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.2 nS

Cossⓘ - Capacitancia de salida: 168 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: TO251

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AP20N06T datasheet

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 ap20n06t.pdf pdf_icon

AP20N06T

 7.1. Size:1438K  cn apm
 ap20n06s.pdf pdf_icon

AP20N06T

AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R

 7.2. Size:925K  cn apm
 ap20n06d.pdf pdf_icon

AP20N06T

AP20N06D 60V N-Channel Enhancement Mode MOSFET Description The AP20N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20 A DS D R

 7.3. Size:1581K  cn apm
 ap20n06bd.pdf pdf_icon

AP20N06T

AP20N06BD 60V N-Channel Enhancement Mode MOSFET Description The AP20N06BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R

MOSTRAR MÁS

Otros transistores... AP2012S, AP2022S, AP2035G, AP2035Q, AP2045KD, AP2055K, AP2080KA, AP2080Q, IRFZ48N, AP20N100Q, AP20P30S, AP2301B, AP2310, AP2316, AP2317A, AP2317QD, AP2317SD