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AP20N06T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP20N06T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.2 nS
   Cossⓘ - Capacitancia de salida: 168 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
   Paquete / Cubierta: TO251
 

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AP20N06T Datasheet (PDF)

 7.1. Size:1438K  cn apm
 ap20n06s.pdf pdf_icon

AP20N06T

AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS DR

 7.2. Size:925K  cn apm
 ap20n06d.pdf pdf_icon

AP20N06T

AP20N06D 60V N-Channel Enhancement Mode MOSFET Description The AP20N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20 A DS DR

 7.3. Size:1581K  cn apm
 ap20n06bd.pdf pdf_icon

AP20N06T

AP20N06BD 60V N-Channel Enhancement Mode MOSFET Description The AP20N06BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS DR

MOSTRAR MÁS

Otros transistores... AP2012S , AP2022S , AP2035G , AP2035Q , AP2045KD , AP2055K , AP2080KA , AP2080Q , IRFZ48N , AP20N100Q , AP20P30S , , , , , , .

 

 
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