All MOSFET. AP20N06T Datasheet

 

AP20N06T Datasheet and Replacement


   Type Designator: AP20N06T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO251
 

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AP20N06T Datasheet (PDF)

 7.1. Size:1438K  cn apm
ap20n06s.pdf pdf_icon

AP20N06T

AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS DR

 7.2. Size:925K  cn apm
ap20n06d.pdf pdf_icon

AP20N06T

AP20N06D 60V N-Channel Enhancement Mode MOSFET Description The AP20N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20 A DS DR

 7.3. Size:1581K  cn apm
ap20n06bd.pdf pdf_icon

AP20N06T

AP20N06BD 60V N-Channel Enhancement Mode MOSFET Description The AP20N06BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS DR

Datasheet: AP2012S , AP2022S , AP2035G , AP2035Q , AP2045KD , AP2055K , AP2080KA , AP2080Q , IRFZ48N , AP20N100Q , AP20P30S , , , , , , .

History: AP20N100Q

Keywords - AP20N06T MOSFET datasheet

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