AP20N06T Datasheet. Specs and Replacement

Type Designator: AP20N06T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO251

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AP20N06T datasheet

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AP20N06T

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 7.1. Size:1438K  cn apm
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AP20N06T

AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R ... See More ⇒

 7.2. Size:925K  cn apm
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AP20N06T

AP20N06D 60V N-Channel Enhancement Mode MOSFET Description The AP20N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20 A DS D R ... See More ⇒

 7.3. Size:1581K  cn apm
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AP20N06T

AP20N06BD 60V N-Channel Enhancement Mode MOSFET Description The AP20N06BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R ... See More ⇒

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Detailed specifications: AP2012S, AP2022S, AP2035G, AP2035Q, AP2045KD, AP2055K, AP2080KA, AP2080Q, IRFZ48N, AP20N100Q, AP20P30S, AP2301B, AP2310, AP2316, AP2317A, AP2317QD, AP2317SD

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