AP2335 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2335 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 242 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: SOT23
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AP2335 datasheet
ap2330gn.pdf
AP2330GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7A G RoHS Compliant & Halogen-Free S D Description AP2330 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos
ap2336gn-hf.pdf
AP2336GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ext
ap2338gn.pdf
AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 35m Surface Mount Device ID 5A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2338 series are from Advanced Power innovated design and silicon process technology to achieve
Otros transistores... AP20P30S, AP2301B, AP2310, AP2316, AP2317A, AP2317QD, AP2317SD, AP2318A, MMIS60R580P, AP25N06K, AP25N06Q, AP25P06K, AP25P06Q, AP25P30Q, AP2714QD, AP2714SD, AP2716KD
History: PZ0703EK
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