AP2335 datasheet, подбор замены

 ..1. Size:568K  allpower
 ap2335.pdf 

 9.1. Size:175K  ape
 ap2330gn.pdf 

AP2330GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7A G RoHS Compliant & Halogen-Free S D Description AP2330 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos

 9.2. Size:93K  ape
 ap2336gn-hf.pdf 

AP2336GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.8A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ext

 9.3. Size:177K  ape
 ap2338gn.pdf 

AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 35m Surface Mount Device ID 5A S Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2338 series are from Advanced Power innovated design and silicon process technology to achieve

 9.4. Size:56K  ape
 ap2332gen-hf.pdf 

AP2332GEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600V D Small Package Outline RDS(ON) 72 Surface Mount Device ID 51mA S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing G techniques to achieve the lowest possibl

 9.5. Size:59K  ape
 ap2331gn-hf.pdf 

AP2331GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 0.8 Surface Mount Device ID - 1A S RoHS Compliant & Halogen-Free SOT-23 G Description D AP2331 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 9.6. Size:91K  ape
 ap2332gn-hf.pdf 

AP2332GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 600V D Small Package Outline RDS(ON) 300 Surface Mount Device ID 27mA S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possibl

 9.7. Size:57K  ape
 ap2333en-hf.pdf 

AP2333EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 80m Surface Mount Device ID -2.9A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2333 series are from Advanced Power innovated design and G silicon process technology to achiev

 9.8. Size:93K  ape
 ap2330gn-hf.pdf 

AP2330GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 90V Small Package Outline RDS(ON) 240m Surface Mount Device ID 1.7A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs utilized advanced processing techniques to S achieve the lowest possible on-resistance,

 9.9. Size:95K  ape
 ap2338gn-hf.pdf 

AP2338GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 35m Surface Mount Device ID 5A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on

 9.10. Size:57K  ape
 ap2334gn-hf.pdf 

AP2334GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30V D Lower Gate Charge RDS(ON) 28m Small Footprint & Low Profile Package ID 5.6A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest