AP30N04K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP30N04K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 84 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET AP30N04K
Principales características: AP30N04K
ap30n06df.pdf
AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R
ap30n06y.pdf
AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R
Otros transistores... AP30H150G , AP30H150K , AP30H150Q , AP30H180K , AP30H220G , AP30H60K , AP30H80K , AP30N03K , IRFB4227 , AP30P06 , AP30P06K , AP3100A , , , , , .
History: AP30H60K
History: AP30H60K
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP3100A | AP30P06K | AP30P06 | AP30N04K | AP30N03K | AP30H80K | AP30H60K | AP30H220G | AP30H180K | AP30H150Q | AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S
Popular searches
oc44 datasheet | 2sa70 | 2sa706 | 2sc539 | 2n5401 transistor equivalent | p0903bdg | c1384 transistor | 2sc1175

