AP30N04K Todos los transistores

 

AP30N04K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP30N04K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 84 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET AP30N04K

 

Principales características: AP30N04K

 ..1. Size:808K  allpower
ap30n04k.pdf pdf_icon

AP30N04K

 8.1. Size:1972K  allpower
ap30n03k.pdf pdf_icon

AP30N04K

 8.2. Size:1427K  cn apm
ap30n06df.pdf pdf_icon

AP30N04K

AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

 8.3. Size:1476K  cn apm
ap30n06y.pdf pdf_icon

AP30N04K

AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R

Otros transistores... AP30H150G , AP30H150K , AP30H150Q , AP30H180K , AP30H220G , AP30H60K , AP30H80K , AP30N03K , IRFB4227 , AP30P06 , AP30P06K , AP3100A , , , , , .

History: AP30H60K

 

 
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