AP3415E Todos los transistores

 

AP3415E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3415E
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11.2 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de AP3415E MOSFET

   - Selección ⓘ de transistores por parámetros

 

Principales características: AP3415E

 ..1. Size:1296K  allpower
 ap3415e.pdf pdf_icon

AP3415E

 8.1. Size:1148K  cn apm
 ap3415a.pdf pdf_icon

AP3415E

AP3415A -20V P-Channel Enhancement Mode MOSFET Description The AP3415A uses advanced trench It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide var

 9.1. Size:1134K  cn apm
 ap3410mi.pdf pdf_icon

AP3415E

AP3410MI 30V N-Channel Enhancement Mode MOSFET Description The AP3410MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R

 9.2. Size:1247K  cn apm
 ap3416ai.pdf pdf_icon

AP3415E

AP3416AI 20V N-Channel Enhancement Mode MOSFET Description The AP3416AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R

MOSTRAR MÁS

Otros transistores... AP30P06K , AP3100A , AP3101A , AP3134N5 , AP3139 , AP3205 , AP3404 , AP3404S , IRF630 , AP3912GD , AP3N50F , AP3N50K , , , , , .

 

 
Back to Top

 


 
.