AP3415E Specs and Replacement
Type Designator: AP3415E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11.2 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: SOT23
AP3415E substitution
AP3415E Specs
ap3415a.pdf
AP3415A -20V P-Channel Enhancement Mode MOSFET Description The AP3415A uses advanced trench It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide var... See More ⇒
ap3410mi.pdf
AP3410MI 30V N-Channel Enhancement Mode MOSFET Description The AP3410MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R ... See More ⇒
ap3416ai.pdf
AP3416AI 20V N-Channel Enhancement Mode MOSFET Description The AP3416AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R ... See More ⇒
Detailed specifications: AP30P06K , AP3100A , AP3101A , AP3134N5 , AP3139 , AP3205 , AP3404 , AP3404S , IRF630 , AP3912GD , AP3N50F , AP3N50K , , , , , .
Keywords - AP3415E MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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MOSFET: AP3N50K | AP3N50F | AP3912GD
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