AP50N06K MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:2029K allpower
ap50n06k.pdf pdf_icon

7.1. Size:2440K cn apm
ap50n06nf.pdf pdf_icon

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒

7.2. Size:824K cn apm
ap50n06p ap50n06t.pdf pdf_icon

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒

7.3. Size:1589K cn apm
ap50n06bd ap50n06by.pdf pdf_icon

AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS D R ... See More ⇒

7.4. Size:2272K cn apm
ap50n06d.pdf pdf_icon

AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒

7.5. Size:3648K cn apm
ap50n06df.pdf pdf_icon

AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒

7.6. Size:1600K cn apm
ap50n06y.pdf pdf_icon

AP50N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP50N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =50A DS D R ... See More ⇒

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