AP50N06K MOSFET PDF: N-Ch, 60V, 50A. Full specification with pinout and replacement list

AP50N06K PDF Specs and Replacement

   Type Designator: AP50N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO252

AP50N06K substitution

- MOSFET ⓘ Cross-Reference Search

AP50N06K PDF Specs

..1. Size:2029K allpower
ap50n06k.pdf pdf_icon

... See More ⇒

7.1. Size:2440K cn apm
ap50n06nf.pdf pdf_icon

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒

7.2. Size:824K cn apm
ap50n06p ap50n06t.pdf pdf_icon

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒

7.3. Size:1589K cn apm
ap50n06bd ap50n06by.pdf pdf_icon

AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS D R ... See More ⇒