AP50N06K Datasheet. Specs and Replacement
Type Designator: AP50N06K 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 185 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO252
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AP50N06K datasheet
ap50n06nf.pdf
AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒
ap50n06p ap50n06t.pdf
AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒
ap50n06bd ap50n06by.pdf
AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS D R ... See More ⇒
Detailed specifications: AP4846, AP4847, AP4946S, AP5040QD, AP50N04GD, AP50N04K, AP50N04Q, AP50N04QD, 4N60, AP50P06K, AP50P20K, AP50P20Q, AP5N10M, AP5N10S, AP5N20K, AP5N50K, AP6007S
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
