ZXMN6A25G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ZXMN6A25G datasheet

..1. Size:659K diodes
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ZXMN6A25G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.050 @ VGS = 10V 6.7 60 0.070 @ VGS = 4.5V 5.7 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management G applications. Features S Low on-r

0.1. Size:603K diodes
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ZXMN6A25G Green 60V SOT223 N-channel enhancement mode MOSFET Product Summary Features and Benefits ID Low Input Capacitance BVDSS RDS(on) max TA = +25 C Low On-Resistance Fast Switching Speed 50m @ VGS = 10V 6.7A 60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 70m @ VGS = 4.5V 5.7A Halogen and Antimony Free. Green Device (Note 3)

6.1. Size:721K diodes
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ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.050 @ VGS = 10V 5 60 0.070 @ VGS = 4.5V 4.2 Description D1 D2 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. G1 G2 Features S1 S2

6.2. Size:807K diodes
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ZXMN6A25K 60V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.050 @ VGS= 10V 10.7 60 0.070 @ VGS= 4.5V 9 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resistance