ZXMN6A25G - параметры транзистора MOSFET, его аналоги, datasheet

ZXMN6A25G Datasheet (PDF)

..1. Size:659K diodes
zxmn6a25g.pdf pdf_icon

ZXMN6A25G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.050 @ VGS = 10V 6.7600.070 @ VGS = 4.5V 5.7DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementGapplications.FeaturesS Low on-r

0.1. Size:603K diodes
zxmn6a25gta.pdf pdf_icon

ZXMN6A25G Green60V SOT223 N-channel enhancement mode MOSFET Product Summary Features and Benefits ID Low Input Capacitance BVDSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 50m @ VGS = 10V 6.7A 60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 70m @ VGS = 4.5V 5.7A Halogen and Antimony Free. Green Device (Note 3)

6.1. Size:721K diodes
zxmn6a25dn8.pdf pdf_icon

ZXMN6A25DN8Dual 60V SO8 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.050 @ VGS = 10V 5600.070 @ VGS = 4.5V 4.2DescriptionD1 D2This new generation trench MOSFET from Zetexfeatures a unique structure combining the benefits oflow on-resistance and fast switching, making it idealfor high efficiency power management applications. G1 G2FeaturesS1 S2

6.2. Size:807K diodes
zxmn6a25k.pdf pdf_icon

ZXMN6A25K60V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.050 @ VGS= 10V 10.7600.070 @ VGS= 4.5V 9DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistance