AP5N20K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP5N20K 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 78 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10.7 nS
Cossⓘ - Capacitancia de salida: 30.2 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO252
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AP5N20K datasheet
ap5n20d-h.pdf
AP5N20D-H 200V N-Channel Enhancement Mode MOSFET Description The AP5N20D-H is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. G
ap5n20d.pdf
AP5N20D 200V N-Channel Enhancement Mode MOSFET Description The AP5N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gener
ap5n2k2en1.pdf
AP5N2K2EN1 Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 0.9V Very Low Gate Drive BVDSS 50V D Lower Gate Charge RDS(ON) 2.2 G Fast Switching Performance ID 200mA RoHS Compliant & Halogen-Free HBM ESD 2KV S Description 2 1 Gate 2 Drain AP5N2K2E series are from Advanced Power innovated design 3 Sourc
Otros transistores... AP50N04Q, AP50N04QD, AP50N06K, AP50P06K, AP50P20K, AP50P20Q, AP5N10M, AP5N10S, RFP50N06, AP5N50K, AP6007S, AP6009S, AP60N04Q, AP60P20K, AP6242, AP6800, AP6802
History: AP4813K
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