AP5N20K Datasheet. Specs and Replacement

Type Designator: AP5N20K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.7 nS

Cossⓘ - Output Capacitance: 30.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO252

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AP5N20K datasheet

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AP5N20K

AP5N20K N-Channel Enhancement Mosfet Feature 200V,5A R ... See More ⇒

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AP5N20K

AP5N20D-H 200V N-Channel Enhancement Mode MOSFET Description The AP5N20D-H is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. G... See More ⇒

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AP5N20K

AP5N20D 200V N-Channel Enhancement Mode MOSFET Description The AP5N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gener... See More ⇒

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AP5N20K

AP5N2K2EN1 Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 0.9V Very Low Gate Drive BVDSS 50V D Lower Gate Charge RDS(ON) 2.2 G Fast Switching Performance ID 200mA RoHS Compliant & Halogen-Free HBM ESD 2KV S Description 2 1 Gate 2 Drain AP5N2K2E series are from Advanced Power innovated design 3 Sourc... See More ⇒

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Detailed specifications: AP50N04Q, AP50N04QD, AP50N06K, AP50P06K, AP50P20K, AP50P20Q, AP5N10M, AP5N10S, RFP50N06, AP5N50K, AP6007S, AP6009S, AP60N04Q, AP60P20K, AP6242, AP6800, AP6802

Keywords - AP5N20K MOSFET specs

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