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ZXMN7A11K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN7A11K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 8.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.1 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 298 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO252 DPAK
     - Selección de transistores por parámetros

 

ZXMN7A11K Datasheet (PDF)

 ..1. Size:524K  diodes
 zxmn7a11k.pdf pdf_icon

ZXMN7A11K

ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fa

 0.1. Size:520K  zetex
 zxmn7a11ktc.pdf pdf_icon

ZXMN7A11K

ZXMN7A11K70V N-channel enhancement mode MOSFETSummary V(BR)DSS=70V : RDS(on)=0.13 ID=6.1A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fa

 6.1. Size:417K  diodes
 zxmn7a11g.pdf pdf_icon

ZXMN7A11K

ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13 ID=3.8A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fast

 6.2. Size:415K  zetex
 zxmn7a11gta.pdf pdf_icon

ZXMN7A11K

ZXMN7A11G70V N-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.13 ID=3.8A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistance Fast

MOSTRAR MÁS

Otros transistores... ZXMN6A11DN8 , ZXMN6A11G , ZXMN6A11Z , ZXMN6A25DN8 , ZXMN6A25G , ZXMN6A25K , ZXMN6A25N8 , ZXMN7A11G , 10N65 , BSS123Z , BSS123W , ZVN4424Z , ZVN4525E6 , ZVN4525G , ZVN4525Z , ZVNL120G , ZXMN0545G4 .

History: IRF644NLPBF | HM4612 | H02N60I | KPCF8402 | AP9563GK | CHM9424JGP | P9515BD

 

 
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