AOK500V120X2 Todos los transistores

 

AOK500V120X2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOK500V120X2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 18 V
   |Id|ⓘ - Corriente continua de drenaje: 6.3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 13.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.675 Ohm
   Paquete / Cubierta: TO247
 

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AOK500V120X2 datasheet

 ..1. Size:1302K  aosemi
 aok500v120x2.pdf pdf_icon

AOK500V120X2

ALPHA & OMEGA AOK500V120X2 SEMICONDUCTOR 1200 V SiC Silicon Carbide Power MOSFET Features Product Summary VDS @ TJ, max 1200 V Proprietary SiC MOSFET technology IDM 10 A Low loss, with low RDS,ON RDS(ON), typ 500 m Fast switching with low RG and low capacitance Optimized gate drive voltage (VGS = 15 V) Q 50 nC rr Low reverse recovery diode (Qrr) E @

 9.1. Size:1338K  aosemi
 aok50b65m2.pdf pdf_icon

AOK500V120X2

AOK50B65M2 TM 650V, 50A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 50A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.72V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 9.2. Size:710K  aosemi
 aok50b60d1.pdf pdf_icon

AOK500V120X2

AOK50B60D1 TM 600V, 50A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 50A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance

 9.3. Size:583K  aosemi
 aok50b65h1.pdf pdf_icon

AOK500V120X2

AOK50B65H1 TM 650V, 50A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V Latest Alpha IGBT ( IGBT) technology 650V breakdown voltage IC (TC=100 50A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.9V C) High efficient turn-on di/dt controllability Very high switching speed Low

MOSTRAR MÁS

Otros transistores... AO3480 , AO3481C , AOB29S50L , AOB380A60L , AOK033V120X2 , AOK033V120X2Q , AOK065V120X2 , AOK065V65X2 , IRLB4132 , AOM033V120X2 , AOM065V120X2Q , AONV070V65G1 , AOTF11S60L , AOTF27S60L , AOTF950A70L , , .

 

 

 


 
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