AOTF27S60L Todos los transistores

 

AOTF27S60L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF27S60L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO220F
 

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AOTF27S60L datasheet

 ..1. Size:1086K  aosemi
 aot27s60l aob27s60l aotf27s60l aotf27s60.pdf pdf_icon

AOTF27S60L

AOT27S60L/AOB27S60L/AOTF27S60L/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60L & AOB27S60L & AOTF27S60L & AOTF27S60 have been fabricated using the advanced IDM 110A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.16 levels of performance and robustness in switching Qg,typ 26nC applic

 5.1. Size:376K  aosemi
 aot27s60 aob27s60 aotf27s60.pdf pdf_icon

AOTF27S60L

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin

 5.2. Size:295K  aosemi
 aotf27s60.pdf pdf_icon

AOTF27S60L

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin

 5.3. Size:236K  inchange semiconductor
 aotf27s60.pdf pdf_icon

AOTF27S60L

isc N-Channel MOSFET Transistor AOTF27S60 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge

MOSTRAR MÁS

Otros transistores... AOK033V120X2Q , AOK065V120X2 , AOK065V65X2 , AOK500V120X2 , AOM033V120X2 , AOM065V120X2Q , AONV070V65G1 , AOTF11S60L , SPP20N60C3 , AOTF950A70L , , , , , , , .

History: AOK500V120X2

 

 

 


 
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