ZVN4525G Todos los transistores

 

ZVN4525G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVN4525G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2 W
   Voltaje máximo drenador - fuente |Vds|: 250 V
   Voltaje máximo fuente - puerta |Vgs|: 40 V
   Corriente continua de drenaje |Id|: 0.31 A

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.8 V
   Carga de la puerta (Qg): 2.6 nC
   Conductancia de drenaje-sustrato (Cd): 72 pF
   Resistencia entre drenaje y fuente RDS(on): 9 Ohm
   Paquete / Cubierta: SOT223

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ZVN4525G Datasheet (PDF)

 ..1. Size:414K  diodes
zvn4525g.pdf

ZVN4525G
ZVN4525G

ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

 0.1. Size:412K  diodes
zvn4525gta zvn4525gtc.pdf

ZVN4525G
ZVN4525G

ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

 7.1. Size:431K  diodes
zvn4525e6.pdf

ZVN4525G
ZVN4525G

ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

 7.2. Size:437K  diodes
zvn4525z.pdf

ZVN4525G
ZVN4525G

ZVN4525Z250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT89impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

 7.3. Size:430K  diodes
zvn4525e6ta zvn4525e6tc.pdf

ZVN4525G
ZVN4525G

ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

 7.4. Size:435K  diodes
zvn4525zta.pdf

ZVN4525G
ZVN4525G

ZVN4525Z250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT89impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

Otros transistores... ZXMN6A25K , ZXMN6A25N8 , ZXMN7A11G , ZXMN7A11K , BSS123Z , BSS123W , ZVN4424Z , ZVN4525E6 , IRFP250 , ZVN4525Z , ZVNL120G , ZXMN0545G4 , ZXMN10A07F , ZXMN10A07Z , ZXMN10A08DN8 , ZXMN10A08E6 , ZXMN10A08G .

 

 
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