ZVN4525G MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZVN4525G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 0.31 A
   Qgⓘ - Total Gate Charge: 2.6 nC
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: SOT223

ZVN4525G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZVN4525G Datasheet (PDF)

..1. Size:414K diodes
zvn4525g.pdf

ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

0.1. Size:412K diodes
zvn4525gta zvn4525gtc.pdf

7.1. Size:431K diodes
zvn4525e6.pdf

ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

7.2. Size:437K diodes
zvn4525z.pdf

ZVN4525Z250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT89impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general

7.3. Size:430K diodes
zvn4525e6ta zvn4525e6tc.pdf