ZVN4525Z Todos los transistores

 

ZVN4525Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZVN4525Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V

|Id|ⓘ - Corriente continua de drenaje: 0.24 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 72 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm

Encapsulados: SOT893L

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ZVN4525Z datasheet

 ..1. Size:437K  diodes
 zvn4525z.pdf pdf_icon

ZVN4525Z

ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT89 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general

 0.1. Size:435K  diodes
 zvn4525zta.pdf pdf_icon

ZVN4525Z

ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT89 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general

 7.1. Size:414K  diodes
 zvn4525g.pdf pdf_icon

ZVN4525Z

ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT223 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general

 7.2. Size:412K  diodes
 zvn4525gta zvn4525gtc.pdf pdf_icon

ZVN4525Z

ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT223 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general

MOSTRAR MÁS

Otros transistores... ZXMN6A25N8 , ZXMN7A11G , ZXMN7A11K , BSS123Z , BSS123W , ZVN4424Z , ZVN4525E6 , ZVN4525G , P60NF06 , ZVNL120G , ZXMN0545G4 , ZXMN10A07F , ZXMN10A07Z , ZXMN10A08DN8 , ZXMN10A08E6 , ZXMN10A08G , ZXMN10A09K .

History: WMQ26P02TS | BM3416E | 2SK1297 | SWB065R68E7T | 4N60KL-TF3T-T | 2SK1202 | SW4N60V

 

 

 

 

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