ZVN4525Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZVN4525Z
Marking Code: N52
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8
V
|Id|ⓘ - Maximum Drain Current: 0.24
A
Qgⓘ - Total Gate Charge: 2.6
nC
Cossⓘ -
Output Capacitance: 72
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 9
Ohm
Package: SOT893L
ZVN4525Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZVN4525Z
Datasheet (PDF)
..1. Size:437K diodes
zvn4525z.pdf
ZVN4525Z250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT89impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general
0.1. Size:435K diodes
zvn4525zta.pdf
ZVN4525Z250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT89impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general
7.1. Size:414K diodes
zvn4525g.pdf
ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general
7.2. Size:412K diodes
zvn4525gta zvn4525gtc.pdf
ZVN4525G250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT223impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and general
7.3. Size:431K diodes
zvn4525e6.pdf
ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener
7.4. Size:430K diodes
zvn4525e6ta zvn4525e6tc.pdf
ZVN4525E6250V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode N-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.