ZVNL120G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVNL120G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.32 A
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
Conductancia de drenaje-sustrato (Cd): 85 pF
Resistencia entre drenaje y fuente RDS(on): 10 Ohm
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de MOSFET ZVNL120G
ZVNL120G Datasheet (PDF)
zvnl120g.pdf
SOT223 N-CHANNEL ENHANCEMENT MODEZVNL120GLOW THRESHOLD VERTICAL DMOS FETISSUE 2 - JANUARY 1996 FEATURESD* VDS - 200V* RDS(ON) - 10SPARTMARKING DETAIL - ZVNL120DGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dis
zvnl120gta zvnl120gtc.pdf
SOT223 N-CHANNEL ENHANCEMENT MODEZVNL120GLOW THRESHOLD VERTICAL DMOS FETISSUE 2 - JANUARY 1996 FEATURESD* VDS - 200V* RDS(ON) - 10SPARTMARKING DETAIL - ZVNL120DGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dis
zvnl120astoa zvnl120astob zvnl120astz.pdf
N-CHANNEL ENHANCEMENTZVNL120AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 200 Volt VDSVGS=10V * RDS(on)=108V 6V * Low threshold4VDAPPLICATIONS G S* Telephone handsetsE-LineTO92 Compatible3VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT2VDrain-Source Voltage VDS 200 V8 10Continuous Drain Current at Tamb=25C ID 180 mAPulsed Drain
zvnl120c.pdf
N-CHANNEL ENHANCEMENTZVNL120CMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D I I TI T I DE-Line T V TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I
zvnl120a.pdf
N-CHANNEL ENHANCEMENTZVNL120AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 200 Volt VDSVGS=10V * RDS(on)=108V 6V * Low threshold4VDAPPLICATIONS G S* Telephone handsetsE-LineTO92 Compatible3VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT2VDrain-Source Voltage VDS 200 V8 10Continuous Drain Current at Tamb=25C ID 180 mAPulsed Drain
Otros transistores... ZXMN7A11G , ZXMN7A11K , BSS123Z , BSS123W , ZVN4424Z , ZVN4525E6 , ZVN4525G , ZVN4525Z , 8205A , ZXMN0545G4 , ZXMN10A07F , ZXMN10A07Z , ZXMN10A08DN8 , ZXMN10A08E6 , ZXMN10A08G , ZXMN10A09K , ZXMN10A11G .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C