ZVNL120G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SOT223 N-CHANNEL ENHANCEMENT MODEZVNL120GLOW THRESHOLD VERTICAL DMOS FETISSUE 2 - JANUARY 1996 FEATURESD* VDS - 200V* RDS(ON) - 10SPARTMARKING DETAIL - ZVNL120DGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dis

SOT223 N-CHANNEL ENHANCEMENT MODEZVNL120GLOW THRESHOLD VERTICAL DMOS FETISSUE 2 - JANUARY 1996 FEATURESD* VDS - 200V* RDS(ON) - 10SPARTMARKING DETAIL - ZVNL120DGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dis

N-CHANNEL ENHANCEMENTZVNL120AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 200 Volt VDSVGS=10V * RDS(on)=108V 6V * Low threshold4VDAPPLICATIONS G S* Telephone handsetsE-LineTO92 Compatible3VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT2VDrain-Source Voltage VDS 200 V8 10Continuous Drain Current at Tamb=25C ID 180 mAPulsed Drain

N-CHANNEL ENHANCEMENTZVNL120CMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D I I TI T I DE-Line T V TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I

N-CHANNEL ENHANCEMENTZVNL120AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 200 Volt VDSVGS=10V * RDS(on)=108V 6V * Low threshold4VDAPPLICATIONS G S* Telephone handsetsE-LineTO92 Compatible3VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT2VDrain-Source Voltage VDS 200 V8 10Continuous Drain Current at Tamb=25C ID 180 mAPulsed Drain