ZXMN10A07F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ZXMN10A07F
   Código: 7N1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 0.625 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 0.8 A

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 2.9 nC
   Conductancia de drenaje-sustrato (Cd): 138 pF
   Resistencia entre drenaje y fuente RDS(on): 0.9 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET ZXMN10A07F

ZXMN10A07F Datasheet (PDF)

..1. Size:269K diodes
zxmn10a07f.pdf

ZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 100V : RDS(on)= 0.7 ID= 0.8ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT23 Low on-resistance

0.1. Size:265K diodes
zxmn10a07fta zxmn10a07ftc.pdf

A Product Line ofDiodes IncorporatedZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features Low On-ResistanceID Low ThresholdBVDSS RDS(ON) Max TA = +25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 0.76A Low Gate Drive 100V 900m @ VGS = 6V 0.67A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal

5.1. Size:330K diodes
zxmn10a07zta.pdf

A Product Line of Diodes IncorporatedZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 1.4A Low Gate Drive 100V 900m @ VGS = 6V 1.2A Totally Lead-Free & Fully RoHS compliant (Not

5.2. Size:186K diodes
zxmn10a07z.pdf

ZXMN10A07Z100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=100V : RDS(on)=0.7 ; ID=1.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT89 Low on-resistance

5.3. Size:744K cn vbsemi
zxmn10a07zta.pdf

ZXMN10A07ZTAwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.102 at VGS = 10 V 4.20.120 at VGS = 6 V 100 3.8 2.9 nC0.125 at VGS = 4.5 V 3.6APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs

Otros transistores... BSS123Z , BSS123W , ZVN4424Z , ZVN4525E6 , ZVN4525G , ZVN4525Z , ZVNL120G , ZXMN0545G4 , IRFB3306 , ZXMN10A07Z , ZXMN10A08DN8 , ZXMN10A08E6 , ZXMN10A08G , ZXMN10A09K , ZXMN10A11G , ZXMN10A11K , ZXMN10A25G .

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