ZXMN10A07F MOSFET Datasheet: N-Ch, 100V, 0.8A. Full specification with pinout and replacement list

ZXMN10A07F Specs and Replacement

Type Designator: ZXMN10A07F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: SOT23

ZXMN10A07F substitution

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ZXMN10A07F datasheet

..1. Size:269K diodes
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0.1. Size:265K diodes
zxmn10a07fta zxmn10a07ftc.pdf pdf_icon

A Product Line of Diodes Incorporated ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features Low On-Resistance ID Low Threshold BVDSS RDS(ON) Max TA = +25 C (Note 6) Fast Switching Speed 700m @ VGS = 10V 0.76A Low Gate Drive 100V 900m @ VGS = 6V 0.67A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal... See More ⇒

5.1. Size:330K diodes
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A Product Line of Diodes Incorporated ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 6) Fast Switching Speed 700m @ VGS = 10V 1.4A Low Gate Drive 100V 900m @ VGS = 6V 1.2A Totally Lead-Free & Fully RoHS compliant (Not... See More ⇒

5.2. Size:186K diodes
zxmn10a07z.pdf pdf_icon

ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=100V RDS(on)=0.7 ; ID=1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES SOT89 Low on-resistance ... See More ⇒