ASA65R350E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ASA65R350E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20.8 nS
Cossⓘ - Capacitancia de salida: 59 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Encapsulados: TO220F
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ASA65R350E datasheet
asa65r350e asu65r350e asd65r350e.pdf
ASA65R350E, ASU65R350E, , ASU65R350E, ASD65R350E MOSFET Silicon N-Channel MOS 1. Applications PFC stages,hard switching PWM stages and resonant PFC stages,hard switching PWM stages and resonant switching PWM PC, Silverbox,Adaptor,LCD & PDP TV,Lighting,Server power,Telecom power nd UPS Silverbox,Adaptor,LCD & PDP TV,Lighting,Server power,Telecom power and UPS application. 2. Feature
asa65r300e asd65r300e asb65r300e.pdf
ASA65R300E, ASD65R300E,ASB65R300E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, HB or AHB or LLC topologies. For PC power, PD Adaptor, LCD & PDP TV, LED Lighting, Server power, UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.278 (typ.) Easy to control Gate switching Enhancement mode V
asa65r300e asd65r300e.pdf
ASA65R300E, ASD65R300E 0E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch,single-ended flyback or ended flyback or two-transistor forward, HB or AHB or LLC topologies. For PC power, PD Adaptor,LCD & PDP TV, Lighting,Server power,UPS application. Adaptor,LCD & PDP TV, LED Lighting,Server power,UPS application. 2. Features Low drain-source on-resistance RDS(ON) =
asw65r120efd asa65r120efd asr65r120efd.pdf
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. Server power, Telecom power, EV charging, Solar inverter, UPS Application. 2. Features Low drain-source on-resistance RDS(ON) = 0.105 (typ.) Easy to control Gate switching E
Otros transistores... ASA60R210E , ASA60R280E , ASA60R330E , ASA65R120EFD , ASA65R220E , ASA65R270E , ASA65R280E , ASA65R300E , K2611 , ASA65R550E , ASA65R850E , ASA70R240E , ASA70R380E , ASA70R600E , ASA70R950E , ASA80R290E , ASA80R750E .
History: ASB65R120EFD
History: ASB65R120EFD
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E | ASB65R120EFD | ASB60R150E | ASA80R900E | ASA80R750E | ASA80R290E | ASA70R950E | ASA70R600E | ASA70R380E | ASA70R240E | ASA65R850E | ASA65R550E | ASA65R350E
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