ASA65R850E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ASA65R850E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21.6 nS
Cossⓘ - Capacitancia de salida: 33 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
Encapsulados: TO220F
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ASA65R850E datasheet
asa65r850e asu65r850e asd65r850e.pdf
ASA65R850E, ASU65R850E, ASD65R850E , ASU65R850E, ASD65R850E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch,single-ended flyback or ended flyback or two-transistor forward topologies. PC power, PD Adaptor,LCD & PDP TV and Adaptor,LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0.750 (typ.) resistance RDS(ON) = 0.750 (typ.
asw65r120efd asa65r120efd asr65r120efd.pdf
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. Server power, Telecom power, EV charging, Solar inverter, UPS Application. 2. Features Low drain-source on-resistance RDS(ON) = 0.105 (typ.) Easy to control Gate switching E
asa65r300e asd65r300e asb65r300e.pdf
ASA65R300E, ASD65R300E,ASB65R300E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, HB or AHB or LLC topologies. For PC power, PD Adaptor, LCD & PDP TV, LED Lighting, Server power, UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.278 (typ.) Easy to control Gate switching Enhancement mode V
asd65r270e asa65r270e.pdf
ASD65R270E, ASA65R270E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 236m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit VD
Otros transistores... ASA60R330E , ASA65R120EFD , ASA65R220E , ASA65R270E , ASA65R280E , ASA65R300E , ASA65R350E , ASA65R550E , RU7088R , ASA70R240E , ASA70R380E , ASA70R600E , ASA70R950E , ASA80R290E , ASA80R750E , ASA80R900E , ASB60R150E .
History: ASA70R600E
History: ASA70R600E
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E | ASB65R120EFD | ASB60R150E | ASA80R900E | ASA80R750E | ASA80R290E | ASA70R950E | ASA70R600E | ASA70R380E | ASA70R240E | ASA65R850E | ASA65R550E | ASA65R350E
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