ASA65R850E Todos los transistores

 

ASA65R850E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ASA65R850E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21.6 nS

Cossⓘ - Capacitancia de salida: 33 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm

Encapsulados: TO220F

 Búsqueda de reemplazo de ASA65R850E MOSFET

- Selecciónⓘ de transistores por parámetros

 

ASA65R850E datasheet

 ..1. Size:1101K  cn anhi
asa65r850e asu65r850e asd65r850e.pdf pdf_icon

ASA65R850E

ASA65R850E, ASU65R850E, ASD65R850E , ASU65R850E, ASD65R850E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch,single-ended flyback or ended flyback or two-transistor forward topologies. PC power, PD Adaptor,LCD & PDP TV and Adaptor,LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0.750 (typ.) resistance RDS(ON) = 0.750 (typ.

 8.1. Size:1451K  cn anhi
asw65r120efd asa65r120efd asr65r120efd.pdf pdf_icon

ASA65R850E

ASW65R120EFD, ASA65R120EFD, ASR65R120EFD MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. Server power, Telecom power, EV charging, Solar inverter, UPS Application. 2. Features Low drain-source on-resistance RDS(ON) = 0.105 (typ.) Easy to control Gate switching E

 8.2. Size:855K  cn anhi
asa65r300e asd65r300e asb65r300e.pdf pdf_icon

ASA65R850E

ASA65R300E, ASD65R300E,ASB65R300E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, HB or AHB or LLC topologies. For PC power, PD Adaptor, LCD & PDP TV, LED Lighting, Server power, UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.278 (typ.) Easy to control Gate switching Enhancement mode V

 8.3. Size:937K  cn anhi
asd65r270e asa65r270e.pdf pdf_icon

ASA65R850E

ASD65R270E, ASA65R270E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 236m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit VD

Otros transistores... ASA60R330E , ASA65R120EFD , ASA65R220E , ASA65R270E , ASA65R280E , ASA65R300E , ASA65R350E , ASA65R550E , RU7088R , ASA70R240E , ASA70R380E , ASA70R600E , ASA70R950E , ASA80R290E , ASA80R750E , ASA80R900E , ASB60R150E .

History: ASA70R600E

 

 

 

 

↑ Back to Top
.