2SK523 Todos los transistores

 

2SK523 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK523
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm
   Paquete / Cubierta: TO92

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2SK523 Datasheet (PDF)

 9.1. Size:133K  toshiba
2sk526.pdf

2SK523
2SK523

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.2. Size:94K  toshiba
2sk525.pdf

2SK523
2SK523

 9.3. Size:36K  hitachi
2sk522.pdf

2SK523
2SK523

2SK522Silicon N-Channel Junction FETApplicationVHF amplifier, Mixer, local oscillatorOutlineSPAK1. Gate122. Source33. Drain2SK522Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 30 VGate current IG 10 mADrain current ID 20 mAChannel power dissipation Pch 200 mWChannel temperature Tch 150 CStorage temperature T

 9.4. Size:55K  no
2sk520.pdf

2SK523
2SK523

 9.5. Size:235K  inchange semiconductor
2sk528.pdf

2SK523
2SK523

isc N-Channel MOSFET Transistor 2SK528DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c

 9.6. Size:234K  inchange semiconductor
2sk526.pdf

2SK523
2SK523

isc N-Channel MOSFET Transistor 2SK526DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies

 9.7. Size:234K  inchange semiconductor
2sk525.pdf

2SK523
2SK523

isc N-Channel MOSFET Transistor 2SK525DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies

 9.8. Size:235K  inchange semiconductor
2sk529.pdf

2SK523
2SK523

isc N-Channel MOSFET Transistor 2SK529DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =450V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c

Otros transistores... 2SK3275-01L , 2SK3275-01S , 2SK3370 , 2SK505 , 2SK507 , 2SK514 , 2SK518 , 2SK519 , IRF9540 , 2SK533 , 2SK611 , 2SK612 , 2SK654 , 2SK660 , 2SK679A , 2SK680A , 2SK681A .

 

 
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