2SK523
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK523
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Id|ⓘ - Maximum Drain Current: 0.03
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 500
Ohm
Package:
TO92
2SK523
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK523
Datasheet (PDF)
9.1. Size:133K toshiba
2sk526.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.3. Size:36K hitachi
2sk522.pdf
2SK522Silicon N-Channel Junction FETApplicationVHF amplifier, Mixer, local oscillatorOutlineSPAK1. Gate122. Source33. Drain2SK522Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 30 VGate current IG 10 mADrain current ID 20 mAChannel power dissipation Pch 200 mWChannel temperature Tch 150 CStorage temperature T
9.5. Size:235K inchange semiconductor
2sk528.pdf
isc N-Channel MOSFET Transistor 2SK528DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.6. Size:234K inchange semiconductor
2sk526.pdf
isc N-Channel MOSFET Transistor 2SK526DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies
9.7. Size:234K inchange semiconductor
2sk525.pdf
isc N-Channel MOSFET Transistor 2SK525DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,such as off-line switching power supplies
9.8. Size:235K inchange semiconductor
2sk529.pdf
isc N-Channel MOSFET Transistor 2SK529DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =450V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
Datasheet: 2SK3275-01L
, 2SK3275-01S
, 2SK3370
, 2SK505
, 2SK507
, 2SK514
, 2SK518
, 2SK519
, K3569
, 2SK533
, 2SK611
, 2SK612
, 2SK654
, 2SK660
, 2SK679A
, 2SK680A
, 2SK681A
.