ASD65R550E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ASD65R550E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 178.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24.8 nS
Cossⓘ - Capacitancia de salida: 76 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de ASD65R550E MOSFET
- Selecciónⓘ de transistores por parámetros
ASD65R550E datasheet
asa65r550e asu65r550e asd65r550e.pdf
ASA 0E, ASU 0E, ASD A65R550 U65R550 D65R550E MOSFET Silico nel MOS on N-Chann 1. Applicatio ons Boost PFC switch, single-ended flyb transistor forw back or two-t rward topologies. PD Adaptor ED lighting. r, LCD & PDP TV and LE 2. Features Low drain- esistance R 0.50 (typ.) -source on-re RDS(ON) = 0 Easy to co ontrol Gate switching Enhancem Vth = 2.8 to 4 ment mode
asa65r850e asu65r850e asd65r850e.pdf
ASA65R850E, ASU65R850E, ASD65R850E , ASU65R850E, ASD65R850E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch,single-ended flyback or ended flyback or two-transistor forward topologies. PC power, PD Adaptor,LCD & PDP TV and Adaptor,LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0.750 (typ.) resistance RDS(ON) = 0.750 (typ.
asa65r300e asd65r300e asb65r300e.pdf
ASA65R300E, ASD65R300E,ASB65R300E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, HB or AHB or LLC topologies. For PC power, PD Adaptor, LCD & PDP TV, LED Lighting, Server power, UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.278 (typ.) Easy to control Gate switching Enhancement mode V
asd65r270e asa65r270e.pdf
ASD65R270E, ASA65R270E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 236m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit VD
Otros transistores... ASB70R380E , ASB80R750E , ASD60R280E , ASD60R330E , ASD65R270E , ASD65R280E , ASD65R300E , ASD65R350E , IRLZ44N , ASD65R850E , ASD70R380E , ASD70R600E , ASD70R950E , ASD80R750E , , , .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E | ASD65R350E | ASD65R300E | ASD65R280E | ASD65R270E | ASD60R330E | ASD60R280E | ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E
Popular searches
ftp08n06a | 2n3405 | 2n3567 | 2sc1226 | 2sd180 | 2sd235 | k3502 datasheet | p0903bdg datasheet
