ASD65R550E MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

ASD65R550E Specs and Replacement

Type Designator: ASD65R550E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.8 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO252

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ASD65R550E datasheet

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asa65r550e asu65r550e asd65r550e.pdf pdf_icon

ASA 0E, ASU 0E, ASD A65R550 U65R550 D65R550E MOSFET Silico nel MOS on N-Chann 1. Applicatio ons Boost PFC switch, single-ended flyb transistor forw back or two-t rward topologies. PD Adaptor ED lighting. r, LCD & PDP TV and LE 2. Features Low drain- esistance R 0.50 (typ.) -source on-re RDS(ON) = 0 Easy to co ontrol Gate switching Enhancem Vth = 2.8 to 4 ment mode ... See More ⇒

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ASA65R300E, ASD65R300E,ASB65R300E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, HB or AHB or LLC topologies. For PC power, PD Adaptor, LCD & PDP TV, LED Lighting, Server power, UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.278 (typ.) Easy to control Gate switching Enhancement mode V... See More ⇒

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ASD65R270E, ASA65R270E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 236m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit VD... See More ⇒