AP2P053Y MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2P053Y

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm

Encapsulados: SOT26

 Búsqueda de reemplazo de AP2P053Y MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP2P053Y datasheet

 ..1. Size:103K  ape
ap2p053y.pdf pdf_icon

AP2P053Y

AP2P053Y Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 65m D Surface Mount Device ID3 -5A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2P053 series are from Advanced Power innovated design and silicon process technology to achi

 7.1. Size:189K  ape
ap2p053n.pdf pdf_icon

AP2P053Y

AP2P053N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 65m Surface Mount Device ID3 -4.2A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2P053 series are from Advanced Power innovated design and silicon process technology to achieve th

 8.1. Size:156K  ape
ap2p052n.pdf pdf_icon

AP2P053Y

AP2P052N Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 52m Surface Mount Device ID3 -4A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2P052 series are from Advanced Power innovated design and silicon process technology to achieve the

 8.2. Size:176K  ape
ap2p052y.pdf pdf_icon

AP2P053Y

AP2P052Y Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Capable of 1.8V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 52m D Surface Mount Device ID -5.1A G D RoHS Compliant & Halogen-Free SOT-26 D D Description AP2P052 series are from Advanced Power innovated design and silicon process technology to ach

Otros transistores... AUP074N10, AUR014N10, AUR020N085, AUR020N10, AUR030N10, AUW025N10, AUW033N08BG, AP12A390YT, 60N06, AP3N5R0MT, AP3N9R5MT, AP3N9R5YT, AP3P020H, AP3P050AH, AP4024GEMT-HF, AP4NAR95CMT-A, AP65SA145DDT8