FKBB3105 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FKBB3105

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 73.7 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: PRPAK3X3

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FKBB3105 datasheet

 ..1. Size:502K  1
 fkbb3105.pdf pdf_icon

FKBB3105

FKBB3105 FETek Technology Corp. P-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline -30V 14m -42A Advanced high cell density Trench technology Description PRPAK3X3 Pin Configuration The FKBB3105 is the high cell density trenched P-ch MOSFE

 9.1. Size:468K  1
 fkbb3004.pdf pdf_icon

FKBB3105

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS

 9.2. Size:458K  1
 fkbb3002.pdf pdf_icon

FKBB3105

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 30V 18m 28A technology Description PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFE

 9.3. Size:468K  fetek
 fkbb3004.pdf pdf_icon

FKBB3105

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS

MOSTRAR MÁS

Otros transistores... AP3P020H, AP3P050AH, AP4024GEMT-HF, AP4NAR95CMT-A, AP65SA145DDT8, AP6NA3R2MT, CRTT067N10N, EHBA036R1, IRFP460