FKBB3105 Specs and Replacement

Type Designator: FKBB3105

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73.7 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: PRPAK3X3

FKBB3105 substitution

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FKBB3105 datasheet

 ..1. Size:502K  1
fkbb3105.pdf pdf_icon

FKBB3105

FKBB3105 FETek Technology Corp. P-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline -30V 14m -42A Advanced high cell density Trench technology Description PRPAK3X3 Pin Configuration The FKBB3105 is the high cell density trenched P-ch MOSFE... See More ⇒

 9.1. Size:468K  1
fkbb3004.pdf pdf_icon

FKBB3105

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS... See More ⇒

 9.2. Size:458K  1
fkbb3002.pdf pdf_icon

FKBB3105

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 30V 18m 28A technology Description PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFE... See More ⇒

 9.3. Size:468K  fetek
fkbb3004.pdf pdf_icon

FKBB3105

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS... See More ⇒

Detailed specifications: AP3P020H, AP3P050AH, AP4024GEMT-HF, AP4NAR95CMT-A, AP65SA145DDT8, AP6NA3R2MT, CRTT067N10N, EHBA036R1, IRFP460

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.