ASDM100N15KQ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ASDM100N15KQ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 37 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de ASDM100N15KQ MOSFET

- Selecciónⓘ de transistores por parámetros

 

ASDM100N15KQ datasheet

 ..1. Size:822K  ascend
asdm100n15kq.pdf pdf_icon

ASDM100N15KQ

ASDM100N15KQ 100V N-CHANNEL MOSFET Features Product Summary 100V,15A R =95m (Typ.) @ V = 10V DS(ON) GS V DS 100 V R =100m (Typ.) @ V = 4.5V DS(ON) GS Low Total Gate Charge R DS(on),TYP@ VGS=10 V 95 m Low Reverse Transfer Capacitance Improved dv/dt Capability 15 A ID Fast Switching Speed Application Uninterruptible Power Su

 6.1. Size:354K  ascend
asdm100n34kq.pdf pdf_icon

ASDM100N15KQ

ASDM100N34KQ 100V N-Channel MOSFET General Features Product Summary Advanced Trench Technology V 100 V DSS Lead free product is acquired 24 Provide Excellent RDS(ON) and Low Gate Charge R m DS(ON)-Typ I 34 A D Application Load Switch PWM Application Power management D G S TO-252 Absolute Maximum Ratings (T =25 unless otherwise specified) C S

 7.1. Size:568K  ascend
asdm100r750pkq.pdf pdf_icon

ASDM100N15KQ

ASDM100R750PKQ -100V P-Channel MOSFET General Features Product Summary Split gate trench MOSFET technology V DS -100 V Low RDS(on) & FOM Extremely low switching loss R DS(on),Typ@ VGS=-10 V 75 m Excellent stability and uniformity I D -20 A Application Power management Portable equipment D G S P-channel TO-252 Absolute Maximum Ratings (T =25 unless

 7.2. Size:552K  ascend
asdm100r066nq.pdf pdf_icon

ASDM100N15KQ

ASDM100R066NQ 100V N-CHANNEL MOSFET Features Product Summary Advanced Trench MOS Technology 100 V Low Gate Charge VDS RDS(on),Typ 5.9 @ VGS=10V m Low R DS(ON) ID 68 A 100% EAS Guaranteed Green Device Available Applications Power Management in Desktop Computer or DC/DC Converters. Isolated DC/DC Converters in Telecom and Industrial. D G S

Otros transistores... AKF30N10S, AKF30N5P0SX, FTE02P15G, FTP02P15G, FTE15C35G, FTF15N35D, FTF25N35DHVT, FTF30P35D, P55NF06, ASDM100N34KQ, ASDM100R045NQ, ASDM100R066NQ, ASDM100R090NP, ASDM100R160NKQ, ASDM100R750PKQ, ASDM12N65F, ASDM20N100Q