ASDM20N60 Datasheet. Equivalente

 ..1. Size:706K  ascend
 asdm20n60.pdf

ASDM20N60 20V N-Channel MOSFET General Features Product Summary Low Gate Charge Enhancement mode BVDSS 20 V Fast Switching RDS(on),Typ.@ VGS=4.5 V 5 m High Power and Current Handling Capability 60 ID A Applications DC-DC primary bridge DC-DC Synchronous rectification DC FAN D G 1 s TO-252 N-channel Absolute Maximum Ratings Symbol Para

 7.1. Size:491K  ascend
 asdm20n12zb.pdf

ASDM20N12ZB 20V N-CHANNEL MOSFET Product Summary Features 20V/12A V DS 20 V Super High Dense Cell Design R DS(on),Typ@ VGS=4.5 V 11.5 m Reliable and Rugged I D 12 A Lead Free Available (RoHS Compliant) Applications Portable Equipment and Battery Powered Systems. DC-DC converter Load Switch Top view D G S SOT-23-3 Absolute Maximum Ratings (TA=25 C Unless O

 7.2. Size:267K  ascend
 asdm20n90q.pdf

ASDM20N90Q 20V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed V DS 20 V Green Device Available RDS(on),TYP@VGS=10V 1.5 m Super Low Gate Charge RDS(on),TYP@VGS=4.5V 1.8 m Excellent CdV/dt effect decline Advanced high cell density Trench technology I D 90 A Application Power Management in Inverter System top view PDFN5*6-8 Maximum rati

 7.3. Size:413K  ascend
 asdm20n100q.pdf

ASDM20N100Q 20V N-Channel MOSFET Product Summary General Description 20V /100A Single N Power MOSFET V DS 20 V Very low on-resistance RDS(on) @ R DS(on),TYP@ VGS=10 V 1. 3 m VGS=4.5 V I D 100 A Pb-free lead plating; RoHS compliant DFN5x6-8 Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 20 V TA=25 C 100 Continuous Drain Cur

 7.4. Size:1062K  ascend
 asdm20n20kq.pdf

ASDM20N20KQ 20V N-Channel MOSFET Product Summary Features Super high dense cell design for BVDSS 20 V extremely low RDS(on) High power and current handing RDS(on),Typ.@VGS=4.5V 20 m capability Lead free product is acquired 20 ID A Application Load Switch PWM Application Power management Schematic diagram TO-252-2L top view Absolute Maximum Ratin