DMG3415UFY4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMG3415UFY4
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.49 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 16 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 281 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
Paquete / Cubierta: X2DFN20153
Búsqueda de reemplazo de DMG3415UFY4 MOSFET
DMG3415UFY4 Datasheet (PDF)
dmg3415ufy4.pdf

DMG3415UFY4P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN2015H4-3 39m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 52m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020
dmg3415u.pdf

DMG3415UP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 42.5m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 53m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020D
dmg3415u.pdf

Product specificationDMG3415UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Fast Switching Speed 42.5m @ VGS = -4.5V -4.0A -20V Low Input/Output Leakage 71m @ VGS = -1.8V -2.0A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS compliant (Notes 1 &
dmg3414u.pdf

DMG3414UN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 37m
Otros transistores... ZXMN10B08E6 , ZXMN15A27K , ZXMN20B28K , DMG1013T , DMG1013UW , DMG1023UV , DMG2301U , DMG3415U , 5N50 , DMG9933USD , DMP2004DMK , DMP2004DWK , DMP2004K , DMP2004TK , DMP2004VK , DMP2004WK , DMP2012SN .
History: IPB60R080P7 | STP3NK60ZFP | F8N60 | H5N60F | IXFH46N65X2 | SSM3K310T | P6003QEA
History: IPB60R080P7 | STP3NK60ZFP | F8N60 | H5N60F | IXFH46N65X2 | SSM3K310T | P6003QEA



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
a1941 datasheet | hrf3205 | c2837 datasheet | 2n414 | c3998 | c4468 datasheet | 2sc2603 | jcs50n20wt