DMG3415UFY4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMG3415UFY4
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.49 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 16 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 281 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.039 Ohm
Тип корпуса: X2DFN20153
Аналог (замена) для DMG3415UFY4
DMG3415UFY4 Datasheet (PDF)
dmg3415ufy4.pdf
DMG3415UFY4P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN2015H4-3 39m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 52m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020
dmg3415u.pdf
DMG3415UP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 42.5m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 53m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020D
dmg3415u.pdf
Product specificationDMG3415UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Fast Switching Speed 42.5m @ VGS = -4.5V -4.0A -20V Low Input/Output Leakage 71m @ VGS = -1.8V -2.0A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS compliant (Notes 1 &
dmg3414u.pdf
DMG3414UN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 37m
dmg3414uq.pdf
DMG3414UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID maxV(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 25m @ VGS = 4.5V 9A Low Input/Output Leakage 20V 29m @ VGS = 2.5V 5.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 37m @ VGS = 1.8V 4.8A Halogen and Antimony
dmg3413l.pdf
DMG3413L20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25C Fast Switching Speed Low Input/Output Leakage 95m @ VGS = -4.5V 3.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V 130m @ VGS = -2.5V 2.5A Halogen and Antimony Free.
dmg3418l.pdf
DMG3418LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 60m @VGS = 10V 4 A Fast Switching Speed 30V 70m @VGS = 4.5V 3 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 st
dmg3414u.pdf
Product specificationDMG3414UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 37m @ VGS = 1.8V Terminals: Finish
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918