T50N06 Datasheet. Equivalente

 ..1. Size:1691K  cn shandong baocheng elec
 e50n06 d50n06 h50n06 t50n06.pdf

50N06 60V N-Channel Power MOSFET TO-263 TO-252 Features Low FOM RDS(on) Qgd 100% avalanche tested Easy to use/drive RoHS compliant TO-251 TO-220 Drain Applications DC/DC Converter Battery Protection Charge/Discharge Gate Load Switch Synchronous Rectification Source Key Performance Parameters Parameter Value Unit VDS@ Tc=25 60 V RDS(on),

 0.1. Size:352K  utc
 utt50n06.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50N06 is an N-channel power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT50N06 is generally applied in low power switching mode power appliances and electronic ballast.

 0.2. Size:1036K  cn minos
 mdt50n06d.pdf

60V N-Channel Power MOSFE Description The MDT50N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R

 9.1. Size:331K  utc
 ut50n03.pdf

UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 TO-251 FEATURES * RDS(ON)

 9.2. Size:1818K  kexin
 ndt50n03.pdf

SMD Type MOSFET N-Channel MOSFET NDT50N03 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 30V ID = 90 A (VGS = 10V) D RDS(ON) 5.7m (VGS = 10V) 0.127 +0.1 0.80-0.1 RDS(ON) 7.8m (VGS = 4.5V) max G + 0.1 1Gate 2.3 0.60- 0.1 +0.15 4.60 -0.15 2Drain 3Source S Absolute Maximum Ratings