T50N06 Datasheet. Specs and Replacement
Type Designator: T50N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 113 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO220
T50N06 substitution
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T50N06 datasheet
e50n06 d50n06 h50n06 t50n06.pdf
50N06 60V N-Channel Power MOSFET TO-263 TO-252 Features Low FOM RDS(on) Qgd 100% avalanche tested Easy to use/drive RoHS compliant TO-251 TO-220 Drain Applications DC/DC Converter Battery Protection Charge/Discharge Gate Load Switch Synchronous Rectification Source Key Performance Parameters Parameter Value Unit VDS@ Tc=25 60 V RDS(on),... See More ⇒
utt50n06.pdf
UNISONIC TECHNOLOGIES CO., LTD UTT50N06 Power MOSFET 50A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50N06 is an N-channel power MOSFET using UTC s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. The UTC UTT50N06 is generally applied in low power switching mode power appliances and electronic ballast. ... See More ⇒
mdt50n06d.pdf
60V N-Channel Power MOSFE Description The MDT50N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R ... See More ⇒
ut50n03.pdf
UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 TO-251 FEATURES * RDS(ON) ... See More ⇒
Detailed specifications: BCT20N65, BCT7N65, BCD7N65, BCT4N65, BCD4N65, BCT12N65, BCD12N65, H50N06, IRF9640
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
