MS23N06A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MS23N06A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 84 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOT23

  📄📄 Copiar 

 Búsqueda de reemplazo de MS23N06A MOSFET

- Selecciónⓘ de transistores por parámetros

 

MS23N06A datasheet

 ..1. Size:343K  bruckewell
ms23n06a.pdf pdf_icon

MS23N06A

MS23N06A N-Channel 30-V (D-S) MOSFET Description Graphic Symbol The MS23N06A is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features P

 9.1. Size:641K  bruckewell
ms23n22.pdf pdf_icon

MS23N06A

MS23N22 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel

 9.2. Size:734K  bruckewell
ms23n26.pdf pdf_icon

MS23N06A

MS23N26 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel

 9.3. Size:629K  bruckewell
ms23n36.pdf pdf_icon

MS23N06A

MS23N36 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel

Otros transistores... BL4N90, BLM3404, B50T040F, B50T070F, BP0405SCG, BPM0306CG, BPM0405CG, BPMS04N003M, IRF640N, MS23P03, MS34P01, MS34P07, MS40N05, MS40P05, MS40P05AU, MS60P03, MSB100N023