MS23N06A datasheet, аналоги, основные параметры

Наименование производителя: MS23N06A  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 47 ns

Cossⓘ - Выходная емкость: 84 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm

Тип корпуса: SOT23

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Аналог (замена) для MS23N06A

- подборⓘ MOSFET транзистора по параметрам

 

MS23N06A даташит

 ..1. Size:343K  bruckewell
 ms23n06a.pdf pdf_icon

MS23N06A

MS23N06A N-Channel 30-V (D-S) MOSFET Description Graphic Symbol The MS23N06A is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features P

 9.1. Size:641K  bruckewell
 ms23n22.pdf pdf_icon

MS23N06A

MS23N22 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel

 9.2. Size:734K  bruckewell
 ms23n26.pdf pdf_icon

MS23N06A

MS23N26 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel

 9.3. Size:629K  bruckewell
 ms23n36.pdf pdf_icon

MS23N06A

MS23N36 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel

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