MS23P03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MS23P03  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 73 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: SOT23

  📄📄 Copiar 

 Búsqueda de reemplazo de MS23P03 MOSFET

- Selecciónⓘ de transistores por parámetros

 

MS23P03 datasheet

 ..1. Size:1191K  bruckewell
 ms23p03.pdf pdf_icon

MS23P03

MS23P03 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The MS23P03 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the small DS(ON) power switching and load switch applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features

 8.1. Size:1740K  bruckewell
 ms23p01.pdf pdf_icon

MS23P03

Bruckewell Technology Corp., Ltd. MS23P01 P-Channel 20-V (D-S) MOSFET Key Features These miniature surface mount MOSFETs utilize a SOT23 Package high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compute

 9.1. Size:348K  bruckewell
 ms23p39.pdf pdf_icon

MS23P03

MS23P39 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 57 @ VGS = -4.5V -3.9 Low thermal impedance -30 89 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (T

 9.2. Size:369K  bruckewell
 ms23p25.pdf pdf_icon

MS23P03

MS23P25 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl

MOSTRAR MÁS

Otros transistores... BLM3404, B50T040F, B50T070F, BP0405SCG, BPM0306CG, BPM0405CG, BPMS04N003M, MS23N06A, IRFP260N, MS34P01, MS34P07, MS40N05, MS40P05, MS40P05AU, MS60P03, MSB100N023, MSD40P45