MS23P03 datasheet, аналоги, основные параметры

Наименование производителя: MS23P03  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.38 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 28 ns

Cossⓘ - Выходная емкость: 73 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm

Тип корпуса: SOT23

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Аналог (замена) для MS23P03

- подборⓘ MOSFET транзистора по параметрам

 

MS23P03 даташит

 ..1. Size:1191K  bruckewell
ms23p03.pdfpdf_icon

MS23P03

MS23P03 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The MS23P03 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the small DS(ON) power switching and load switch applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features

 8.1. Size:1740K  bruckewell
ms23p01.pdfpdf_icon

MS23P03

Bruckewell Technology Corp., Ltd. MS23P01 P-Channel 20-V (D-S) MOSFET Key Features These miniature surface mount MOSFETs utilize a SOT23 Package high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compute

 9.1. Size:348K  bruckewell
ms23p39.pdfpdf_icon

MS23P03

MS23P39 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 57 @ VGS = -4.5V -3.9 Low thermal impedance -30 89 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (T

 9.2. Size:369K  bruckewell
ms23p25.pdfpdf_icon

MS23P03

MS23P25 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl

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