MS40N05 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MS40N05  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.2 nS

Cossⓘ - Capacitancia de salida: 76 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm

Encapsulados: SOT23

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MS40N05 datasheet

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MS40N05

MS40N05 N-Channel 40-V (D-S) MOSFET Description Graphic Symbol The MS40N05 is a high performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the small DS(ON) power switching and load switch applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features Pac

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MS40N05

MS40N06 60V N-Channel MOSFET GENERAL DESCRIPTION The MS40N06 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6006M6 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. FEATURES Ad

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MS40N05

HMS40N10D N-Channel Super Trench Power MOSFET Description The HMS40N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectifi

Otros transistores... BP0405SCG, BPM0306CG, BPM0405CG, BPMS04N003M, MS23N06A, MS23P03, MS34P01, MS34P07, IRF3710