MS40N05 Datasheet. Specs and Replacement

Type Designator: MS40N05  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.2 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOT23

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MS40N05 datasheet

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MS40N05

MS40N05 N-Channel 40-V (D-S) MOSFET Description Graphic Symbol The MS40N05 is a high performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the small DS(ON) power switching and load switch applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features Pac... See More ⇒

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MS40N05

MS40N06 60V N-Channel MOSFET GENERAL DESCRIPTION The MS40N06 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6006M6 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. FEATURES Ad... See More ⇒

 9.1. Size:1130K  cn hmsemi
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MS40N05

HMS40N10D N-Channel Super Trench Power MOSFET Description The HMS40N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectifi... See More ⇒

Detailed specifications: BP0405SCG, BPM0306CG, BPM0405CG, BPMS04N003M, MS23N06A, MS23P03, MS34P01, MS34P07, IRF3710

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