MSQ30P40D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSQ30P40D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14.6 nS

Cossⓘ - Capacitancia de salida: 173 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOP8

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MSQ30P40D datasheet

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MSQ30P40D

MSQ30P40D Dual P-Channel 30-V (D-S) MOSFET Graphic Symbol Description The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full Package Dimension fun

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MSQ30P40D

MSQ30P07D Dual P-Channel 30-V (D-S) MOSFET Graphic Symbol Description The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the DS(ON) synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability ap

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MSQ30P40D

MSQ30P15 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Otros transistores... MSH40N032, MSH60N35D, MSHM30N46, MSHM40N085, MSHM60P14, MSQ100N03D, MSQ30P07D, MSQ30P15, 2SK3878