MSQ30P40D Datasheet. Specs and Replacement

Type Designator: MSQ30P40D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.6 nS

Cossⓘ - Output Capacitance: 173 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP8

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MSQ30P40D datasheet

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MSQ30P40D

MSQ30P40D Dual P-Channel 30-V (D-S) MOSFET Graphic Symbol Description The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full Package Dimension fun... See More ⇒

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MSQ30P40D

MSQ30P07D Dual P-Channel 30-V (D-S) MOSFET Graphic Symbol Description The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the DS(ON) synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability ap... See More ⇒

 8.2. Size:346K  bruckewell
 msq30p15.pdf pdf_icon

MSQ30P40D

MSQ30P15 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ... See More ⇒

Detailed specifications: MSH40N032, MSH60N35D, MSHM30N46, MSHM40N085, MSHM60P14, MSQ100N03D, MSQ30P07D, MSQ30P15, 2SK3878

Keywords - MSQ30P40D MOSFET specs

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