DMP2012SN MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMP2012SN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMP2012SN

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 0.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: SC59

Búsqueda de reemplazo de DMP2012SN MOSFET

- Selecciónⓘ de transistores por parámetros

DMP2012SN datasheet

..1. Size:243K diodes
dmp2012sn.pdf pdf_icon

DMP2012SN P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SC-59 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020C Fast Switching Speed Lead Free By

8.1. Size:168K diodes
dmp2018lfk.pdf pdf_icon

DMP2018LFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on)max Low Input Capacitance TA = 25 C Low Input/Output Leakage 16m @ VGS = -4.5V -12.8A ESD Protected Gate up to 2kV -20V Lead Free by Design, RoHS Compliant (Note 1) 25m @ VGS = -2.0V -10A "Green" Device (Note 2) Qual

9.1. Size:365K 1
dmp2002ups-13.pdf pdf_icon

9.2. Size:598K diodes
dmp2003ups.pdf pdf_icon

DMP2003UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25 C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.2m @ VGS = -10V -150A

9.3. Size:196K diodes
dmp2070ucb6.pdf pdf_icon

DMP2070UCB6 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Qg & Qgd Small Footprint ID V(BR)DSS RDS(ON) Low Profile 0.62mm height TA = 25 C Lead Free By Design/RoHS Compliant (Note 1) 70m @ VGS = -4.5V 3.5 A "Green" Device Halogen and Antimony Free (Note 2) -20V Qualified to AEC-Q101 Standards for High Reliability

9.4. Size:158K diodes
dmp2035uts.pdf pdf_icon

DMP2035UTS DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case TSSOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminal Connections See D

9.5. Size:425K diodes
dmp2088lcp3.pdf pdf_icon

DMP2088LCP3 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Qg & Qgd BVDSS RDS(ON) Max TA = +25 C Small Footprint Low Profile 0.30mm Height 88m @ VGS = -8V -2.9A -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 105m @ VGS = -4.5V -1.8A Halogen and Antimony Free. Green Device (Note 3) Descrip

9.6. Size:406K diodes
dmp2060ufdb.pdf pdf_icon

DMP2060UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C 90m @ VGS = -4.5V -3.2A Low Profile, 0.6mm Max Height -20V 137m @ VGS = -2.5V -2.6A ESD protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

9.7. Size:252K diodes
dmp2035u.pdf pdf_icon

DMP2035U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D L

9.8. Size:379K diodes
dmp2023ufdf.pdf pdf_icon

DMP2023UFDF 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25 C Low Gate Threshold Voltage 27m @ VGS = -4.5V -7.6A Fast Switching Speed 32m @ VGS = -2.5V -6.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V

9.9. Size:592K diodes
dmp2002ups.pdf pdf_icon

DMP2002UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 1.9m @ VGS = -10V -60A

9.10. Size:651K diodes
dmp2045u.pdf pdf_icon

DMP2045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance BVDSS RDS(ON) max TA = +25 C Low Input Capacitance 45m @ VGS = -4.5V -4.3A Fast Switching Speed -20V -3.8A 58m @ VGS = -2.5V Low Input/Output Leakage 90m @ VGS = -1.8V -3.1A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

9.11. Size:189K diodes
dmp2039ufde.pdf pdf_icon

DMP2039UFDE Green P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) Ensures on State Losses are Minimized ID V(BR)DSS RDS(ON) max Package 0.6mm Profile Ideal for Low Profile Applications TA = +25 C PCB Footprint of 4mm2 27m @ VGS = -4.5V -6.7A ESD Protected Gate U-DFN2020-6 -25V Lead-Free Finish; RoHS Compliant (Note

9.12. Size:398K diodes
dmp2006ufg.pdf pdf_icon

DMP2006UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25 C Small form factor, thermally efficient package enables higher density end products 5.5m @ VGS = -4.5V -40A -20V Occupies just 33% of the board area occupied by SO-8 enabling 7.5m

9.13. Size:217K diodes
dmp2004wk.pdf pdf_icon

DMP2004WK P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-323 Very Low Gate Threshold Voltage VGS(th)

9.14. Size:206K diodes
dmp2033ucb9.pdf pdf_icon

DMP2033UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Qg & Qgd Small Footprint 1.5-mm 1.5-mm ID V(BR)DSS RDS(ON) Gate ESD Protection 3kV TA = 25 C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V 33m @ VGS = -4.5V -5.8A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Sta

9.15. Size:332K diodes
dmp2066lvt.pdf pdf_icon

DMP2066LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Gate Threshold Voltage Low Input Capacitance 45m @ VGS = -4.5V -4.5A -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 65m @ VGS = -2.5V -3.8A Halogen and Antimony Free. Green Device (Note

9.16. Size:163K diodes
dmp2066lsd.pdf pdf_icon

DMP2066LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Dual P-Channel MOSFET Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 40m @ VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020D

9.17. Size:211K diodes
dmp2035uvt.pdf pdf_icon

DMP2035UVT -20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed ESD protected Up To 3KV 35m @ VGS = -4.5V -6.0A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) -20V 45m @ VGS = -2.5V -5.2A "Green" Device (Note 2)

9.18. Size:292K diodes
dmp2033uvt.pdf pdf_icon

DMP2033UVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 65m @VGS = -4.5V -4.2A Fast Switching Speed -20V 100m @VGS = -2.5V -3.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

9.19. Size:137K diodes
dmp2004tk.pdf pdf_icon

DMP2004TK P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-523 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level

9.20. Size:421K diodes
dmp2047ucb4.pdf pdf_icon

DMP2047UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25 C) Features LD-MOS Technology with the Lowest Figure of Merit VDSS RDS(on) Qg Qgd ID RDS(on) = 40m to Minimize On-State Losses -20V 40m 2.3nC 0.4nC -4.1A Qg = 2.3nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential Description CSP with Footprin

9.21. Size:148K diodes
dmp2004dwk.pdf pdf_icon

DMP2004DWK DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case SOT-363 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage VGS(TH)

9.22. Size:142K diodes
dmp2004vk.pdf pdf_icon

DMP2004VK DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(TH)

9.23. Size:250K diodes
dmp2008ufg.pdf pdf_icon

DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25 C Small form factor thermally efficient package enables higher density end products 8m @ VGS = -4.5V -14A Occupies just 33% of the board area occupied by SO-8 enabling 9.8m @ VGS = -2.

9.24. Size:500K diodes
dmp2035ufdf.pdf pdf_icon

DMP2035UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID Max V(BR)DSS RDS(ON) Max TA = +25 C PCB Footprint of 4mm2 Low Gate Threshold Voltage 29m @ VGS = -4.5V -6.9A Low On-Resistance -20V ESD Protected Gate 39m @ VGS = -2.5V -5.9A Totally Lead-Free & Fully

9.25. Size:288K diodes
dmp2021ufdf.pdf pdf_icon

DMP2021UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25 C 16m @ VGS = -4.5V -9.0A Low Gate Threshold Voltage -20V -7.7A 22m @ VGS = -2.5V Low On-Resistance ESD protected Gate Totally Lead-Free & Full

9.26. Size:217K diodes
dmp2004dmk.pdf pdf_icon

DMP2004DMK DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case SOT-26 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(th)

9.27. Size:142K diodes
dmp2004k.pdf pdf_icon

9.28. Size:284K diodes
dmp2038uss.pdf pdf_icon

DMP2038USS 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Gate Threshold Voltage Low Input Capacitance 38m @ VGS = -4.5V -6.5A -20V Fast Switching Speed 56m @ VGS = -2.5V -5.0A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

9.29. Size:177K diodes
dmp2066ufde.pdf pdf_icon

DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID V(BR)DSS RDS(ON) Package PCB footprint of 4mm2 TA = +25 C Low Gate Threshold Voltage 36m @ VGS = -4.5V -6.2A Low On-Resistance U-DFN2020-6 -20V 56m @ VGS = -2.5V -5.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

9.30. Size:121K diodes
dmp2022lss.pdf pdf_icon

DMP2022LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 13m @ VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 16m @ VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020 22m @ VGS = -2.5V Terminals Connections See Diagr

9.31. Size:239K diodes
dmp2007ufg.pdf pdf_icon

DMP2007UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25 Small form factor thermally efficient package enables higher C density end products 5.5m @ VGS = -10V -40A Occupies just 33% of the board area occupied by SO-8 enabling -20V 7.0m

9.32. Size:172K diodes
dmp2066ldm.pdf pdf_icon

DMP2066LDM P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low RDS(ON) Case SOT-26 Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m @VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020D 70 m @VGS = -2.5V Terminals Finish - Matte Tin Solderable per MIL

9.33. Size:155K diodes
dmp2066lss.pdf pdf_icon

DMP2066LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 40m @ VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 70m @ VGS = -2.5V Moisture Sensitivity Level 1 per J-STD-02

9.34. Size:137K diodes
dmp2066lsn.pdf pdf_icon

DMP2066LSN P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low RDS(ON) Case SC-59 Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m @VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020D 70 m @VGS = -2.5V Terminals Finish - Matte Tin Solderable per MIL-

9.35. Size:142K diodes
dmp2069ufy4.pdf pdf_icon

DMP2069UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case DFN2015H4-3 54m @ VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 69m @ VGS = -2.5V Moisture Sensitivity Level 1 per J-STD-020 90m @ VGS = -1.8V Terminals Finish Matte Ti

9.36. Size:134K tysemi
dmp2035u.pdf pdf_icon

Product specification DMP2035U P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminal Co

9.37. Size:67K tysemi
dmp2066lsn.pdf pdf_icon

Product specification DMP2066LSN P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON) Case SC-59 Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m @VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020D 70 m @VGS = -2.5V Terminals Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage

9.38. Size:1091K kexin
dmp2066ldm.pdf pdf_icon

SMD Type MOSFET P-Channel MOSFET DMP2066LDM ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 6 5 4 Features VDS (V) =-20V ID =-4.6 A 1 2 3 RDS(ON) 40m (VGS =-4.5V) +0.02 0.15 -0.02 +0.01 -0.01 RDS(ON) 70m (VGS =-2.5V) +0.2 -0.1 Low Input/Output Leakage D D S D D G Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sourc

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