DMP2012SNP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC-59 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020C Fast Switching Speed Lead Free By

DMP2018LFKP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on)max Low Input Capacitance TA = 25C Low Input/Output Leakage 16m @ VGS = -4.5V -12.8A ESD Protected Gate up to 2kV -20V Lead Free by Design, RoHS Compliant (Note 1) 25m @ VGS = -2.0V -10A "Green" Device (Note 2) Qual

DMP2002UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 1.9m @ VGS = -10V -60A

DMP2003UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.2m @ VGS = -10V -150A

DMP2070UCB6P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Qg & Qgd Small FootprintID V(BR)DSS RDS(ON) Low Profile 0.62mm height TA = 25C Lead Free By Design/RoHS Compliant (Note 1) 70m @ VGS = -4.5V 3.5 A "Green" Device Halogen and Antimony Free (Note 2) -20V Qualified to AEC-Q101 Standards for High Reliability

DMP2035UTSDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: TSSOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminal Connections: See D

DMP2088LCP3 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Qg & Qgd BVDSS RDS(ON) Max TA = +25C Small Footprint Low Profile 0.30mm Height 88m @ VGS = -8V -2.9A -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 105m @ VGS = -4.5V -1.8A Halogen and Antimony Free. Green Device (Note 3) Descrip

DMP2060UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 90m @ VGS = -4.5V -3.2A Low Profile, 0.6mm Max Height -20V 137m @ VGS = -2.5V -2.6A ESD protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

DMP2035UP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D L

DMP2023UFDF20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications ID max V(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 27m @ VGS = -4.5V -7.6A Fast Switching Speed 32m @ VGS = -2.5V -6.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V

DMP2002UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 1.9m @ VGS = -10V -60A

DMP2045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance BVDSS RDS(ON) max TA = +25C Low Input Capacitance 45m @ VGS = -4.5V -4.3A Fast Switching Speed -20V -3.8A 58m @ VGS = -2.5V Low Input/Output Leakage 90m @ VGS = -1.8V -3.1A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

DMP2039UFDEGreenP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) Ensures on State Losses are Minimized ID V(BR)DSS RDS(ON) max Package 0.6mm Profile Ideal for Low Profile Applications TA = +25C PCB Footprint of 4mm2 27m @ VGS = -4.5V -6.7A ESD Protected Gate U-DFN2020-6 -25V Lead-Free Finish; RoHS Compliant (Note

DMP2006UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25C Small form factor, thermally efficient package enables higher density end products 5.5m @ VGS = -4.5V -40A -20V Occupies just 33% of the board area occupied by SO-8 enabling 7.5m

DMP2004WKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Very Low Gate Threshold Voltage VGS(th)

DMP2033UCB9P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Qg & Qgd Small Footprint 1.5-mm 1.5-mm ID V(BR)DSS RDS(ON) Gate ESD Protection 3kV TA = 25C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V 33m @ VGS = -4.5V -5.8A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Sta

DMP2066LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 45m @ VGS = -4.5V -4.5A -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 65m @ VGS = -2.5V -3.8A Halogen and Antimony Free. Green Device (Note

DMP2066LSDDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Dual P-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 40m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D

DMP2035UVT-20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-ResistanceV(BR)DSS RDS(on) max TA = 25C Fast Switching Speed ESD protected Up To 3KV 35m @ VGS = -4.5V -6.0A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) -20V 45m @ VGS = -2.5V -5.2A "Green" Device (Note 2)

DMP2033UVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 65m @VGS = -4.5V -4.2A Fast Switching Speed -20V 100m @VGS = -2.5V -3.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)Description

DMP2004TKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level

DMP2047UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 40m to Minimize On-State Losses -20V 40m 2.3nC 0.4nC -4.1A Qg = 2.3nC for Ultra-Fast Switching Vgs(th) = -0.8V typ. for a Low Turn-On Potential Description CSP with Footprin

DMP2004DWKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage VGS(TH)

DMP2004VKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(TH)

DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 8m @ VGS = -4.5V -14A Occupies just 33% of the board area occupied by SO-8 enabling 9.8m @ VGS = -2.

DMP2035UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID Max V(BR)DSS RDS(ON) Max TA = +25C PCB Footprint of 4mm2 Low Gate Threshold Voltage 29m @ VGS = -4.5V -6.9A Low On-Resistance -20V ESD Protected Gate 39m @ VGS = -2.5V -5.9A Totally Lead-Free & Fully

DMP2021UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID maxV(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C 16m @ VGS = -4.5V -9.0A Low Gate Threshold Voltage -20V -7.7A 22m @ VGS = -2.5V Low On-Resistance ESD protected Gate Totally Lead-Free & Full

DMP2004DMKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(th)

DMP2004KP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage VGS(TH)

DMP2038USS20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 38m @ VGS = -4.5V -6.5A -20V Fast Switching Speed 56m @ VGS = -2.5V -5.0A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

DMP2066UFDE20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID V(BR)DSS RDS(ON) Package PCB footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 36m @ VGS = -4.5V -6.2A Low On-Resistance U-DFN2020-6 -20V 56m @ VGS = -2.5V -5.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

DMP2022LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 13m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 16m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 22m @ VGS = -2.5V Terminals Connections: See Diagr

DMP2007UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25 Small form factor thermally efficient package enables higher C density end products 5.5m @ VGS = -10V -40A Occupies just 33% of the board area occupied by SO-8 enabling -20V 7.0m

DMP2066LDMP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SOT-26 Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D 70 m @VGS = -2.5V Terminals: Finish - Matte Tin Solderable per MIL

DMP2066LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOP-8L 40m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 70m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-02

DMP2066LSNP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low RDS(ON): Case: SC-59 Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D 70 m @VGS = -2.5V Terminals: Finish - Matte Tin Solderable per MIL-

DMP2069UFY4P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN2015H4-3 54m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 69m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020 90m @ VGS = -1.8V Terminals: Finish Matte Ti

Product specificationDMP2035UP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Co

Product specificationDMP2066LSNP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): Case: SC-59 Case Material Molded Plastic. UL Flammability Rating 94V-0 40 m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D 70 m @VGS = -2.5V Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage

SMD Type MOSFETP-Channel MOSFETDMP2066LDM( )SOT-23-6 Unit:mm0.4+0.1-0.16 5 4 Features VDS (V) =-20V ID =-4.6 A1 2 3 RDS(ON) 40m (VGS =-4.5V)+0.020.15 -0.02+0.01-0.01 RDS(ON) 70m (VGS =-2.5V)+0.2-0.1 Low Input/Output LeakageD D SD D G Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc