CED3133 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CED3133  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 260 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO251

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CED3133 datasheet

 ..1. Size:773K  cet
 ced3133 ceu3133.pdf pdf_icon

CED3133

CED3133/CEU3133 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -35A, RDS(ON) = 16mW @VGS = -10V. RDS(ON) = 27mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 2

 9.1. Size:409K  cet
 ced3120 ceu3120.pdf pdf_icon

CED3133

CED3120/CEU3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A , RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU

 9.2. Size:414K  cet
 ceu3172 ced3172.pdf pdf_icon

CED3133

CED3172/CEU3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A, RDS(ON) = 20m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM

 9.3. Size:409K  cet
 ceu3120 ced3120.pdf pdf_icon

CED3133

CED3120/CEU3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A , RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMU

MOSTRAR MÁS

Otros transistores... BC2302-2.8A, BC2302T-2.8A, BC2302W, BC3134K, BC3134KT, CEB100N10L, CEC2533, CEC3257, IRF1405